| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor with a channel formation region for engaging with channel formation region configuration particulates and organic semiconductor molecule which are arranged generally with regularity. SOLUTION: The field effect transistor includes source/drain electrodes 14, the channel formation region 15, a gate insulating layer 13 and a gate electrode 12. A substrate layer 30 is formed between the part of a support 11 located between the source/drain electrodes 14 and the channel formation region 15. The substrate 30 is made by arranging the substrate layer configuration particulate 31 made of an electric insulating material generally with regularity. The channel formation region 15 has a channel formation region configuration particulate 21 made of a conductor or a semiconductor, and a conductive path 20 constituted by the organic semiconductor molecule 22 combined with the channel formation region configuration particulate 21. The channel formation region configuration particulate 21 is arranged generally with regularity based on the particulate arrangement state of the substrate layer 30. COPYRIGHT: (C)2006,JPO&NCIPI
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