| 摘要 |
A nonvolatile semiconductor memory includes a gate insulating layer, a control gate layer, a first silicide layer, charge accumulating layers, memory gate layers and second silicide layers. The gate insulating layer is formed on a first region of a semiconductor substrate. The control gate layer is formed on the gate insulating layer. The first silicide layer is formed on the control gate layer. The charge accumulating layer is formed on one side of the first region of the semiconductor substrate, and capable to accumulate charges. The memory gate layers is formed on the charge accumulating layer, away from the control gate layer. The second silicide layer is formed on the memory gate layer. The memory gate layer includes a thick gate layer and a thin gate layer. The thick gate layer is formed far side from the control gate layer, and bonded to the second silicide layer. The thin gate layer is formed near side from the control gate layer, thinner in a layer thickness than the thick gate layer and shorter in a height than the control gate layer.
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