| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
An n channel type power MOS field effect transistor has silica particles buried in a bottom portion of a trench and a gate electrode buried in another portion of the trench. The gate electrode is in contact with the silica particles. A gap of the silica particles is not filled with the gate electrode.
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| 申请公布号 |
US2006081903(A1) |
申请公布日期 |
2006.04.20 |
| 申请号 |
US20050249265 |
申请日期 |
2005.10.14 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INOUE TOMOKI;AIDA SATOSHI;TAKAHASHI YASUSHI;KOBAYASHI HITOSHI |
| 分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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