| 摘要 |
Disclosed is a light emitting semiconductor bonding structure and its manufacturing method. The light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. The first metallic layer and the second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer cooperate with the N electrode layer and the P electrode layer of the light emitting semiconductor respectively, such that the first metallic layer and the second metallic layer correspond to and are bonded onto the N electrode layer and the P electrode layer respectively through the supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between. |
