| 摘要 |
FIELD: engineering of devices for storing and/or processing data, based on utilization of thin ferroelectric films, in particular, engineering of ferroelectric or electret three-dimensional memorizing devices. ^ SUBSTANCE: device has stack of memorizing arrays, formed of two or more ribbon structures, stacked one on another or intertwined with each other, while each ribbon structure has flexible substrate of non electro-conductive material, at least one electrode layer and a layer of memorizing material. ^ EFFECT: expanded functional capabilities. ^ 12 cl, 9 dwg |
