| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a step that is required for a mask alignment is secured in one pattern process, and the step serves as an alignment mark even after the step is substituted to a high temperature diffusion process. <P>SOLUTION: After a nitride film 9 is selectively formed on a semiconductor wafer, a thermal oxide film 12 is formed by thermal oxidation, and then the nitride film 9 is removed. Then, impurities are introduced into the semiconductor wafer with the thermal oxide film 12 as a mask and then are diffused, thus forming a diffusion layer 10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
