| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a through electrode, wherein the through electrode having a high reliability is easily formed at a low cost. <P>SOLUTION: On a semiconductor substrate 1 in which a first insulating film 2 and an electrode pad 3 are formed on a first face thereof, a second insulating film 5 is formed on a second face, and a portion is perforated just under the electrode pad 3 of the second insulating film 5. The second insulating film 5 is formed as a mask, and a through hole is formed in the semiconductor substrate 1. When this takes place, the through hole is formed retreating from the open edge of the first insulating film 2. A third insulating film 6 is formed only in the inner wall of the through hole, and when this takes place, the opening edge of the second insulating film 5 and the inner peripheral face of the third insulating film 6 are formed so as to coincide with each other as viewed from a second face side of the semiconductor substrate 1. Thereafter, the first insulating film 2 is etched with using the second insulating film 5 as a mask, a back face of the electrode pad 3 is exposed, and a conductive part 7 serving as a through electrode is formed in the through hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
