| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing dangling bond of silicon after an assembling process of DRAM, for improved refreshing characteristics after the assembling process of DRAM. <P>SOLUTION: The manufacturing method includes a process (a) for performing a lead-out wiring 23 on a semiconductor device 20 containing a semiconductor substrate 21 where an element is formed; and a process (b) for annealing the semiconductor device 20 in a prescribed temperature range, time period, hydrogen concentration range, and pressure range. The process (a) can include a process (a1) for packaging the semiconductor device 20. The prescribed temperature range is preferred to be between the working temperature of the process (a) and a solder reflow temperature: for example, 170-260°. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
