发明名称 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of preventing the incidence of oblique ray into a photodiode, without making the action of a gate electrode delayed. SOLUTION: A light-receiving element 54 comprises a light-receiving portion which is a region formed into a matrix form at equal intervals and is capable of receiving light in a light-receiving region defined in a semiconductor substrate 51. A plurality of readout electrodes 53 are provided on the semiconductor substrates 51, corresponding to a plurality of light-receiving elements 54 and read out electric charge generated by the light-receiving elements 54. A plurality of interconnecting lines 57 cover the plurality of readout electrodes 53 and apply voltage to the plurality of readout electrodes 53; plurality of reflective barriers 62 are formed on a region on the interconnect lines 57 in a lattice form, such that they partition the light-receiving elements 54, respectively, and reflect a portion of the light, incident from the upward with respect to the semiconductor substrate 51 onto the light-receiving portion of each light-receiving element 54. The plurality of reflecting barriers 62 are electrically insulated from the plurality of interconnect lines 57. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108693(A) 申请公布日期 2006.04.20
申请号 JP20050306388 申请日期 2005.10.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KURIYAMA TOSHIHIRO
分类号 H01L27/14;H04N5/335;H04N5/361;H04N5/369;H04N5/3728 主分类号 H01L27/14
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