| 摘要 |
An integrated circuit device has a plurality of memory macros that include a redundant circuit to replace a defective cell and a plurality of bits of nonvolatile memory elements that store redundant replacement information to replace a defective cell of a first memory macro selected from the plurality of memory macros with the redundant circuit. The redundant replacement information is transferred with a plurality of bits in parallel from the plurality of bits of nonvolatile memory elements to the plurality of memory macros.
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