发明名称 TETRAFLUOROSILANE PRODUCTION PROCESS, METHOD FOR ASSAYING IMPURITIES IN TETRAFLUOROSILANE, AND GAS BASED THEREON
摘要 FIELD: silicon compounds technology. ^ SUBSTANCE: tetrafluorosilane production process comprises following stages: (1) hexafluorosilicate heating; (2-1) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine gas; (2-2) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine-polyvalent metal compound; (2-3) reaction of tetrafluorosilane gas obtained in stage (2-1) with fluorine-polyvalent metal compound. Finally, high-purity tetrafluorosilane with 0.1 ppm by volume of hexafluorodisiloxane is obtained, which is applicable in manufacture of optical fiber, semiconductors, and sun battery elements. ^ EFFECT: reduced content of impurities in product. ^ 24 cl, 1 dwg, 1 tbl, 9 ex
申请公布号 RU2274603(C2) 申请公布日期 2006.04.20
申请号 RU20040103976 申请日期 2002.07.11
申请人 发明人 ATOBE KHITOSI;OKA MASAKAZU;KANEKO TORAITI
分类号 C01B33/107;B01D53/04;B01D53/22;B01J20/281;C03B37/00;C03B37/014;G01N21/09;G01N21/35;G01N21/3504;G01N30/02;G01N30/14;G01N30/20;G01N30/26;G01N30/40;G01N30/46;G01N30/50;G01N30/64;G01N30/88;G08C23/06;H01B11/22;H01L21/205;H01L31/20 主分类号 C01B33/107
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