发明名称 |
Image sensor pixel having photodiode with multi-dopant implantation |
摘要 |
An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N- region formed within a P-type region. The N - region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node. |
申请公布号 |
EP1648035(A1) |
申请公布日期 |
2006.04.19 |
申请号 |
EP20050256400 |
申请日期 |
2005.10.14 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
RHODES, HOWARD E. |
分类号 |
H01L31/0352;H01L27/146;H01L27/148;H01L31/0224;H01L31/103 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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