发明名称 |
Memory circuit with a substitution memory for faulty memory cells |
摘要 |
A memory circuit (MEM_CIRC_2) comprises a main memory block (MEM), a substitution memory block (RED_REG) for substitution of faulty memory cells in the main memory block (MEM) and a control mean (CONTR_LOG) that activates the substitution memory block (RED_REG) and leaves the main memory block (MEM) inactivated in case of an access to a faulty memory cell and that redirects this access to the substitution memory block (RED_REG).
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申请公布号 |
EP1647992(A1) |
申请公布日期 |
2006.04.19 |
申请号 |
EP20040024528 |
申请日期 |
2004.10.14 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
JALLAMION-GRIVE, YANNIS;COLLURA, MICHEL |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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