| 摘要 |
PROBLEM TO BE SOLVED: To provide a module heater made of MoSi2 with improved U-shaped heater form and mounting method to a furnace, with small heat loss, enabled to heat uniformly, useful for heat treatment or heating of a semiconductor production device. SOLUTION: For the rod-shaped heater made of MoSi2 mounted by penetrating a furnace wall, MoSi2 with high purity and low resistance is used for a terminal part, and MoSi2 including an oxide with insulation property with high resistance is used for a heat radiation part, and hat radiation at terminal part is restrained by making the radius of the terminal part small.
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