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发明名称
Pin Photodiode
摘要
A pin-photodiode has a semiconductor detector layer (3) with a small band gap with a p-doped zone under wider band-gap of a semiconductor mantle layer (4). The mantle (4) p-doped zone (7) has a detent (5) over the photodetection layer (3).
申请公布号
EP1583157(A3)
申请公布日期
2006.04.19
申请号
EP20050005879
申请日期
2005.03.17
申请人
OSRAM OPTO SEMICONDUCTORS GMBH
发明人
REILL, WOLFGANG
分类号
H01L31/105
主分类号
H01L31/105
代理机构
代理人
主权项
地址
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