发明名称 |
Fingerprint sensor and fabrication method thereof |
摘要 |
Provided are a fingerprint sensor and a fabrication method thereof. The fingerprint sensor includes: a complementary metal-oxide semiconductor structure which is formed on a substrate that is doped with a first type dopant; an insulating layer which is formed on the complementary metal-oxide semiconductor structure; a lower electrode which is formed in a central portion of the insulating layer; a piezoelectric region which is formed on the lower electrode; an upper electrode which is formed on the piezoelectric layer; and a fingerprint contact layer which is formed to cover a portion of an upper surface of the insulating layer on which the lower electrode has not been formed, the lower electrode, the piezoelectric region, and the upper electrode. <IMAGE> |
申请公布号 |
EP1533743(B1) |
申请公布日期 |
2006.04.19 |
申请号 |
EP20040255047 |
申请日期 |
2004.08.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM, YUN-WOO, |
分类号 |
A61B5/117;G06K9/00;B06B1/06;G06T1/00;H01L21/00;H01L21/8238;H01L27/092;H01L41/08;H01L41/18;H01L41/187;H01L41/193;H01L41/22;H01L41/311 |
主分类号 |
A61B5/117 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|