发明名称 |
Multi-layer hard mask structure for etching deep trench in substrate |
摘要 |
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.
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申请公布号 |
US7029753(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20030727790 |
申请日期 |
2003.12.04 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
TZOU KAAN-LU;TSAI TZU-CHING;CHEN YI-NAN |
分类号 |
C03C15/00;H01L21/033;H01L21/308;H01L21/8242 |
主分类号 |
C03C15/00 |
代理机构 |
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