| 摘要 |
A Heterojunction Bipolar Transistor, HBT, ( 100 ) containing a collector layer ( 104 ), a base layer ( 105 ) and an emitter layer ( 106 ) is constructed such that the collector layer ( 104 ), the base layer ( 105 ) and the emitter layer ( 106 ) have different lattice constants of a<SUB>c</SUB>, a<SUB>b </SUB>and a<SUB>e </SUB>respectively, and a value of a<SUB>b </SUB>between values of a<SUB>c </SUB>and a<SUB>e </SUB>(in other words, the values of a<SUB>c</SUB>, a<SUB>b </SUB>and a<SUB>e </SUB>satisfy a relationship of a<SUB>c</SUB>>a<SUB>b</SUB>>a<SUB>e </SUB>or a<SUB>c</SUB><A<SUB>b</SUB><A<SUB>e</SUB>). According to the present invention, the HBT having a high reliability can be realized without altering the existing apparatus and steps for producing the HBT extensively.
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