发明名称 |
Stabilization method for drain voltage in non-volatile multi-level memory cells and related memory device |
摘要 |
A method and an electronic device for stabilizing the voltage on the drain terminals of multi-level non-volatile memory cells during programming thereof. The voltage is provided by a drain voltage regulator having an output connected to the drain terminals at a common circuit node by a metal line conduction path having a parasitic intrinsic resistance. A feedback path is advantageously provided between the common circuit node and an input of the regulator.
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申请公布号 |
US7031191(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20030748701 |
申请日期 |
2003.12.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CRIPPA LUCA;RAGONE GIANCARLO |
分类号 |
G11C16/04;G11C11/56;G11C16/12 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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