| 摘要 |
In a solid-state image-sensing device, when an image sensing operation is performed in each pixel, a MOS transistor T 1 is turned on and a MOS transistor T 4 is turned off to make a MOS transistor T 2 operate in a subthreshold region. When a reset operation is performed in each pixel, the MOS transistor T 1 is turned off and the MOS transistor T 4 is turned on to feed a constant voltage to the gate and drain of the MOS transistor T 2 . Then, the MOS transistor T 4 is turned off, then the voltage at the node "a" is reset, and then a pulse signal phiV is fed to a MOS transistor T 5 to obtain an output. By using the thus obtained output as compensation data, variations in sensitivity among individual pixels are reduced.
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