发明名称 |
Method for forming metal interconnect in a carbon containing silicon oxide film |
摘要 |
An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.
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申请公布号 |
US7030009(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20040942953 |
申请日期 |
2004.09.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YUASA HIROSHI |
分类号 |
H01L21/4763;H01L21/3105;H01L21/311;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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