| 摘要 |
The single substrate thermal processing apparatus ( 2 ) includes a process chamber ( 5 ) arranged to accommodate a target substrate (W) and provided with a showerhead ( 10 ) disposed on its ceiling. A support member ( 28 ) is disposed to support the target substrate (W) so as for it to face the showerhead ( 10 ), when the target substrate (W) is subjected to a semiconductor process. A heating lamp ( 30 ) is disposed below the support member ( 28 ), for radiating light to heat the target substrate (W). The support member ( 28 ) and heating lamp ( 30 ) are moved up and down together relative to the showerhead ( 10 ) by an elevator mechanism ( 20 ). The elevator mechanism ( 20 ) sets different distances between the showerhead ( 30 ) and heating lamp ( 10 ), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead ( 10 ) to fall in a predetermined range.
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