发明名称 Transition metal alloys for use as a gate electrode and devices incorporating these alloys
摘要 Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
申请公布号 US7030430(B2) 申请公布日期 2006.04.18
申请号 US20030641848 申请日期 2003.08.15
申请人 INTEL CORPORATION 发明人 DOCZY MARK;BAXTER NATHAN;CHAU ROBERT S.;HARKONEN KARI;LANG TEEMU
分类号 H01L27/148;C22C32/00;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L29/49 主分类号 H01L27/148
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