发明名称 |
Transition metal alloys for use as a gate electrode and devices incorporating these alloys |
摘要 |
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
|
申请公布号 |
US7030430(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20030641848 |
申请日期 |
2003.08.15 |
申请人 |
INTEL CORPORATION |
发明人 |
DOCZY MARK;BAXTER NATHAN;CHAU ROBERT S.;HARKONEN KARI;LANG TEEMU |
分类号 |
H01L27/148;C22C32/00;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L29/49 |
主分类号 |
H01L27/148 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|