Source and drain protection and stringer-free gate formation in semiconductor devices

摘要

A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and depositing a gate material over the fin structure. The method may also include depositing an organic anti-reflective coating on the gate material and forming a gate mask on the organic anti-reflective coating. The organic anti-reflective coating around the gate mask may be removed, and the gate material around the gate mask may be removed to define a gate.