发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A technology of restraining junction leakage in a semiconductor device is to be provided. There is provided a semiconductor device provided with a semiconductor substrate, a gate electrode 9 formed on the semiconductor substrate, and a source/drain region formed beside the gate electrode, wherein the source/drain region 4 comprises a first impurity diffusion region including a first P-type impurity and located in the proximity of a surface of the semiconductor substrate, and a second P-type impurity diffusion region located below the first impurity diffusion region and including a second P-type impurity having a smaller diffusion coefficient in the semiconductor substrate than the first P-type impurity.
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申请公布号 |
US7030464(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20040791381 |
申请日期 |
2004.03.03 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MASUOKA YURI;KIMIZUKA NAOHIKO |
分类号 |
H01L29/167;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/78 |
主分类号 |
H01L29/167 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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