发明名称 |
Compound semiconductor device, production method thereof, light-emitting device and transistor |
摘要 |
A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.
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申请公布号 |
US7030003(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20040793832 |
申请日期 |
2004.03.08 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L21/28;H01L21/20;H01L29/04;H01L29/20;H01L29/737;H01L29/812;H01L29/861;H01L33/00;H01L33/16;H01L33/30 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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