发明名称 |
Semiconductor device with multiple power sources |
摘要 |
Well bias voltages are generated in accordance with a logic power supply voltage and a memory power supply voltage. The transistor included in a control circuit in a memory core is constituted of a logic transistor manufactured through the same manufacturing steps as those for the transistors of a logic formed on the same semiconductor substrate. Well bias voltages (VBB, VPP) are applied to a back gate of this logic transistor. A memory integrated with a logic on a common semiconductor substrate is provided which allows a transistor of a control circuit therein to be manufactured through the same manufacturing process as that of the logic and allows reduction of current consumption.
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申请公布号 |
US7030681(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20020118432 |
申请日期 |
2002.04.09 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
YAMAZAKI AKIRA;MORISHITA FUKASHI;TAITO YASUHIKO;FUJII NOBUYUKI;OKAMOTO MAKO |
分类号 |
G05F1/10;G11C11/408;G11C5/14;G11C11/407;H01L21/822;H01L27/04 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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