Method for fabricating a trench capacitor with an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell,申请号KR20030085947-传众专利搜索

发明名称	Method for fabricating a trench capacitor with an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell
摘要
申请公布号	KR100571762(B1)	申请公布日期	2006.04.17
申请号	KR20030085947	申请日期	2003.11.29
申请人		发明人
分类号	H01L21/20;H01L21/334;H01L21/425;H01L21/8242;H01L27/108;H01L29/94	主分类号	H01L21/20
代理机构		代理人
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