| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a reliable through electrode with ease and at a low cost, relating to a semiconductor device comprising a through electrode. <P>SOLUTION: A first insulating film 2 and an electrode pad 3 are formed on the first surface of a semiconductor wafer 1. A through hole is formed in the semiconductor wafer 1, just under the electrode pad 3. A second insulating film 5 is formed on the inner wall of the through hole and on the second surface of the semiconductor wafer 1. When forming the second insulating film 5, electrodeposition is employed with the semiconductor wafer 1 as a cathode. After the second insulating film 5 is formed, the first insulating film 2 is etched with the second insulating film as a mask, so that the rare surface of the electrode pad 3 is exposed, thus forming a conductive layer 6 which is a through electrode in the through hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
