RAW MATERIAL LIQUID FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD OF PRODUCING Hf-Si CONTAINING COMPLEX OXIDE FILM USING THE RAW MATERIAL LIQUID

摘要

PROBLEM TO BE SOLVED: To provide a raw material liquid for MOCVD having a high film-forming rate and a method of forming an Hf-Si containing complex oxide film using the raw material liquid, and also to provide a method of forming an Hf-Si containing complex oxide film using the raw material liquid for MOCVD having good adhesion to an underlay. SOLUTION: The raw material liquid for MOCVD is prepared by the process of mixing an organic Si compound represented by (R1R2N)nSiH(4-n)and an organic Hf compound represented by Hf(OR3)4at a prescribed ratio and dissolving the organic Hf compound into the organic Si compound. The mixing ratio of the organic Si compound and the organic Hf compound represented in a weight ratio (organic Hf compound/organic Si compound) lies in a range of 0.001 to 0.5 wt.%. COPYRIGHT: (C)2006,JPO&NCIPI