发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which causes little variation in semiconductor devices and can reduce a cost with few material and has a high yield, by providing a method of forming a semiconductor region having a fine shape. SOLUTION: Laser light is irradiated on part of a semiconductor film to form an insulation film, and then the semiconductor film is etched with the insulation film as a mask to form a semiconductor region having a desired shape. Using the semiconductor region, a semiconductor device is manufactured. This method allows the formation of the semiconductor region having a fine shape at a desired position without using a photolithographic process which uses a well-known resist. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006100810(A) |
申请公布日期 |
2006.04.13 |
申请号 |
JP20050249781 |
申请日期 |
2005.08.30 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NAKAMURA OSAMU;YAMAMOTO HIROKO;SATO JUNKO |
分类号 |
H01L21/336;H01L21/20;H01L21/268;H01L21/3065;H01L21/308;H01L21/316;H01L29/786 |
主分类号 |
H01L21/336 |
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地址 |
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