METHOD AND APPARATUS FOR EVALUATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus which enable the evaluation of the thickness of the lower insulating film easily and preciously in semiconductor devices using a laminated insulating film formed by a laminate of two or more insulating films as a gate insulating film. SOLUTION: Gate voltage sweep takes place on a semiconductor device with a laminated insulating film for which the thickness of the lower insulating film is to be measured (step S11). A low voltage peak current mode is found from the current-voltage characteristic obtained by this sweep to determine the peak voltage and peak current (step S12). Then, the thickness of the lower insulating film is obtained from the correlation between the determined and predetermined peak voltages and the lower insulating film thickness (step S13). COPYRIGHT: (C)2006,JPO&NCIPI