| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate capable of growing thereon a hexagonal semiconductor crystal among group 3 element nitride semiconductor crystals, and to provide its production method. SOLUTION: The substrate for growing the group 3 element nitride semiconductor crystal is prepared by heating and pressurizing quartz to convert into tridymite, and cutting a low temperature type tridymite obtained by cooling. COPYRIGHT: (C)2006,JPO&NCIPI
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