发明名称 Power amplifier module
摘要 A semiconductor device has a plurality of external connection lead terminals including an input lead terminal, an output lead terminal, and an RF grounding lead terminal, a heat dissipation plate connected to the RF grounding lead terminal, a semiconductor device and a printed circuit board each mounted on the heat dissipation plate, and a mold resin for sealing the semiconductor device, the printed circuit board, and the heat dissipation plate such that at least a part of the back surface of the heat dissipation plate is exposed. The semiconductor device amplifies a signal inputted to the input lead terminal and outputs the amplified signal from the output lead terminal.
申请公布号 US2006076673(A1) 申请公布日期 2006.04.13
申请号 US20050226330 申请日期 2005.09.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MIYAJI MASAYUKI;NAGATA SADAO;TANIUCHI HIROTADA;OTA YORITO;IWAKIRI TAKAHIRO;SAKATANI TOMOTAKA
分类号 H01L23/34 主分类号 H01L23/34
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