发明名称 PIN photodiode structure and fabrication process for reducing dielectric delamination
摘要 A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.
申请公布号 US2006076589(A1) 申请公布日期 2006.04.13
申请号 US20050079708 申请日期 2005.03.14
申请人 GAO XIANG;CERUZZI ALEX;SCHWED STEVE;LIU LINLIN;GOTTFRIED MARK 发明人 GAO XIANG;CERUZZI ALEX;SCHWED STEVE;LIU LINLIN;GOTTFRIED MARK
分类号 H01L31/113 主分类号 H01L31/113
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