发明名称 |
PIN photodiode structure and fabrication process for reducing dielectric delamination |
摘要 |
A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.
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申请公布号 |
US2006076589(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050079708 |
申请日期 |
2005.03.14 |
申请人 |
GAO XIANG;CERUZZI ALEX;SCHWED STEVE;LIU LINLIN;GOTTFRIED MARK |
发明人 |
GAO XIANG;CERUZZI ALEX;SCHWED STEVE;LIU LINLIN;GOTTFRIED MARK |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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