发明名称 SENSITIVE SILICON SENSOR AND TEST STRUCTURE FOR AN ULTRA-SENSITIVE SILICON SENSOR
摘要 A thermal radiation sensor is disclosed herein a semiconductor thermocouple comprised of a pair of silicon diodes is connected in back-to-back relationship, with one of the diodes being located in a detector stage. The other diode is located in a heat bath stage together with a sensed temperature difference amplifier. The detector stage is thermally isolated from the heat bath stage by a low thermal conductivity link that includes electrical wires which connect the back-to-back diodes to the amplifier.
申请公布号 WO2006039679(A2) 申请公布日期 2006.04.13
申请号 WO2005US35570 申请日期 2005.10.04
申请人 NORTHROP GRUMMAN CORPORATION;BLUZER, NATHAN 发明人 BLUZER, NATHAN
分类号 G01J5/20 主分类号 G01J5/20
代理机构 代理人
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