发明名称 |
SENSITIVE SILICON SENSOR AND TEST STRUCTURE FOR AN ULTRA-SENSITIVE SILICON SENSOR |
摘要 |
A thermal radiation sensor is disclosed herein a semiconductor thermocouple comprised of a pair of silicon diodes is connected in back-to-back relationship, with one of the diodes being located in a detector stage. The other diode is located in a heat bath stage together with a sensed temperature difference amplifier. The detector stage is thermally isolated from the heat bath stage by a low thermal conductivity link that includes electrical wires which connect the back-to-back diodes to the amplifier. |
申请公布号 |
WO2006039679(A2) |
申请公布日期 |
2006.04.13 |
申请号 |
WO2005US35570 |
申请日期 |
2005.10.04 |
申请人 |
NORTHROP GRUMMAN CORPORATION;BLUZER, NATHAN |
发明人 |
BLUZER, NATHAN |
分类号 |
G01J5/20 |
主分类号 |
G01J5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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