发明名称 EXPOSURE APPARATUS AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide an exposure apparatus in which exposure of a mask pattern can be fast performed with high accuracy while preventing misalignment of exposure caused by expansion/contraction of an object substrate to be exposed or of a mask on exposing the object substrate. <P>SOLUTION: The exposure apparatus 10 comprises: an object substrate 11 to be exposed which is coated with a photosensitive material; a mask 12 having a predetermined mask pattern formed thereon; a light source device 13 to project the mask pattern onto the object substrate 11 to expose; a positioning means 14 to position the object substrate 11 and the mask 12 opposing to each other at a predetermined spacing; an exposure magnification controlling means 15 to control the exposure magnification of the mask pattern projected onto the substrate 11; and a controlling means 16 to control the exposure magnification controlling means 15, based on results of magnification correction operation using a preliminarily determined relational expression. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006098650(A) 申请公布日期 2006.04.13
申请号 JP20040283691 申请日期 2004.09.29
申请人 NSK LTD 发明人 FUKAZAWA TOSHIO
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
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