发明名称 |
High electron mobility epitaxial substrate |
摘要 |
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9 , wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.
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申请公布号 |
US2006076576(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050540514 |
申请日期 |
2005.06.23 |
申请人 |
OSADA TAKENORI;INOUE TAKAYUKI;FUKUHARA NOBORU |
发明人 |
OSADA TAKENORI;INOUE TAKAYUKI;FUKUHARA NOBORU |
分类号 |
H01L29/201;H01L31/0328;H01L21/336;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L29/201 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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