发明名称 NON-VOLATILE MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a non-volatile memory device that can reduce the time required for initialization process. <P>SOLUTION: The non-volatile memory device 100 includes a non-volatile memory array 115, having a plurality of pages that are units for reading out data. Each page includes a plurality of non-volatile memory cells, a first region 150 for storing data, and a second region 160 for storing control data. The non-volatile memory device further includes read out means 185, 180 and 190 for reading out data from the pages, and a data buffer 200 for temporarily storing the data that have been read out from the pages, by the read out means. When reading out the control data, the read out means reads out the second regions 160, across a plurality of pages, at one time. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006099940(A) 申请公布日期 2006.04.13
申请号 JP20050231494 申请日期 2005.08.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TOYAMA MASAYUKI;KIYOHARA TOKUZO
分类号 G11C16/02;G11C16/06 主分类号 G11C16/02
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