| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor thin film manufacturing apparatus and method for forming a semiconductor single crystal thin film of a high quality group-4 element and a semiconductor polycrystalline thin film, using the advantage of a spattering method equipped with high material utilization efficiency, large area correspondence, and high safety. SOLUTION: It is important to use mixed sputtering gas of a noble gas and hydrogen, lower the attained lowest pressure of a vacuum vessel to an ultra-high vacuum region that is lower than 1×10<SP>-7</SP>Torr, carry out sputtering using a magnetron system, maintain at no discharge of sputtering gas between spatter deposition and spatter deposition, the pressure of a sputter gun including a sputter target to be maintained under 1×10<SP>-7</SP>Torr, and always maintain the purity of the sputter target at high purity. Only through the combination of them for allowing them to function complementarily, and always maintaining the purity of the sputter target at high purity, setting the amount of mixing of oxygen into a deposited thin film to be equal to or lower than the limit of detection, suppressing damages and etching effect on the deposited thin film, and can a group-4 system semiconductor crystal which is of high quality of practical level and of high grade be formed. COPYRIGHT: (C)2006,JPO&NCIPI
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