| 摘要 |
PROBLEM TO BE SOLVED: To prevent the breakage by which an electric conduction plug is damaged at the time of etching for forming a ferroelectric capacitor or recovery annealing of a ferroelectric film. SOLUTION: Semiconductor substrate 10 in which MOSFET is formed is prepared so that a first interlayer insulating film 35 provided with an electric conduction plug 44 may be formed on the semiconductor substrate. Next, a second interlayer insulating film 50 is formed on the first interlayer insulating film. Moreover, the second interlayer insulating film of a peripheral circuit region 14 is made to remain by etching. Further, the first interlayer insulating film of a memory cell region 12 and the top surface of an electric conductive plug are exposed. Besides, a laminate film 67a for capacitor formation is formed on the exposure side of the first interlayer insulating film containing an electric conductive plug, and on the remaining part of the second interlayer insulating film. Successively, an etching mask is formed on the laminate film for capacitor formation in an area 16 for capacitor formation which is an area contained by a memory cell region and at the same time an area set up on the electric conductive plug. Thus, a ferroelectric capacitor 67 is formed by etching by use of the etching mask. COPYRIGHT: (C)2006,JPO&NCIPI
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