NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

An element structure of a nitride semiconductor light emitting element is provided with a stacked body composed of a nitride semiconductor layer. The stacked body includes a light emitting part, which has a stacked structure wherein an active layer (14) is sandwiched between a first n-type layer (13) and a p-type clad layer (15), and a second n-type layer (16) positioned on the side of the p-type clad layer outside the light emitting part. In the case of growing the stacked body on a substrate (11), the p-type clad layer (15) of the light emitting part is positioned on the upper side, and the second n-type layer (16) is positioned upper than the light emitting part. The second n-type layer (16) is dry-etched and an exposed surface is formed. By forming an electrode (P12) on the exposed surface by dry etching, the electrode (P12) is permitted to be a low contact resistance p-side electrode for hole injection on the p-type clad layer (15) of the light emitting part, while being the electrode formed on the n-type layer (16).