| 摘要 |
PROBLEM TO BE SOLVED: To achieve a low threshold voltage independent of a process operation, and to reduce a cost and a variation of elements. SOLUTION: An NMOS transistor M1 has a threshold voltage Vthn1. A voltage Va is inputted to a node N2 of the transistor M1 and rectified. A rectified voltage Vb is outputted from a node N1. A threshold voltage generator 11 is connected to a gate of the transistor M1 and the node N1, generates a voltage Vthl as a voltage increased from a voltage Vb at the node N1 by the threshold voltage Vthn1 and decreased by a voltageΔVthn sufficiently small in comparison with the threshold voltage Vthn1, and outputs the voltage Vth1 to the gate of the transistor M1. When the voltage Va is lower than the voltage Vb by the voltageΔVthn or more, the transistor M1 is turned on. COPYRIGHT: (C)2006,JPO&NCIPI
|
