| 摘要 |
The present invention provides a semiconductor memory device which comprises an interlayer insulating film formed on a semiconductor substrate, a contact plug formed in the interlayer insulating film and having one end electrically connected to the semiconductor substrate, a ferroelectric capacitor formed on the interlayer insulating film and comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of the contact plug, an insulating film which covers the ferroelectric capacitor and has an opening that exposes the first electrode, and a wiring film which covers the ferroelectric capacitor and the insulating film and is electrically connected to the first electrode exposed through the opening and which consists of a material having conductivity and even a hydrogen diffusion preventing function.
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