METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH
摘要
A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180 °C.
申请公布号
WO2006037151(A2)
申请公布日期
2006.04.13
申请号
WO2005AU01438
申请日期
2005.10.04
申请人
SILVERBROOK RESEARCH PTY LTD;MCREYNOLDS, DARRELL LARUE;SILVERBROOK, KIA
