| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light retrieving efficiency of a flip-chip type group III nitride compound semiconductor light emitting element. <P>SOLUTION: In a semiconductor light emitting element 100, a buffer layer 102, a non-doped GaN layer 103, a high carrier concentration n<SP>+</SP>-type layer 104, an n-type layer 105, a light emitting layer 106, a p type layer 107, a DBR layer 108 in which a non doped GaN and an AlGaN are laminated, and a p type contact layer 109 are sequentially laminated and formed on a sapphire substrate. The reflection factor of the light directed upward by the DBR layer 108 and a positive electrode 120 reaches 80% and the DBR layer 108 is a non doped layer, an electrostatic breakdown voltage is improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
