| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which an interlayer insulating film has a high flat property. SOLUTION: In the method for manufacturing the semiconductor device, a lower wiring 3 and an upper layer 10 are provided via an interlayer insulating film 4, and the lower wiring 3 is electrically connected to the upper layer 10 through a via hole plug 8a. The interlayer insulating film 4 is formed on the semiconductor substrate 1 so as to cover the lower wiring 3. A via hole 6a for exposing the surface of the lower wiring 3 is formed in the interlayer insulating film 4. Concurrently, in an area of the interlayer insulating film 4 where no via holes 6a exist, a dummy via hole 7a which does not reach a depth of the lower wiring 3 is formed by decreasing its density gradually from an area where the via hole 6a is formed. A metal layer 8 is formed on the semiconductor substrate 1 so as to bury the via hole 6a and the dummy hole 7a. By polishing on the semiconductor substrate 1, a via hole plug 8a and a dummy via hole plug 8b are formed. The upper layer wiring 10 is formed so as to come into contact with the via hole plug 8a. COPYRIGHT: (C)2006,JPO&NCIPI |
