| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer that reduces surface roughness possibly affecting quality in the manufacture of semiconductor integrated circuits and has small surface roughness in a silicon epitaxial wafer in which the plane orientation of a main surface is ä110}. SOLUTION: In the method for manufacturing a silicon epitaxial wafer in which the plane orientation of the main surface is ä110}, a temperature of 750-650°C in the cooling process after epitaxial growth is quenched at a rate that is larger than 500°C/minute. Or a substrate is used for annealing at 705°C±15°C, where the substrate grows a protective film on the surface at a temperature of 720°C or higher in the cooling process, or causes a silicon wafer used as the substrate to be inclined by 4.6°(±1.6°or smaller) in the direction of ä110} or ä111} orthogonally crossing the main surface from ä110} in the main surface. COPYRIGHT: (C)2006,JPO&NCIPI
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