SEMICONDUCTOR DEVICE, FULL WAVE RECTIFICATION CIRCUIT, AND HALF-WAVE RECTIFICATION CIRCUIT

摘要

PROBLEM TO BE SOLVED: To prevent the leakage of a wasteful current to a semiconductor substrate when passing a forward current through a diode. SOLUTION: An n-type well region 32 is formed on the surface of a p-type semiconductor substrate 31. A p-type well region 33 is further formed in the n-type well region 32. An n+-type diffusion layer 34 is formed on the surface of the n-type well region 32 outside the p-type well region 33. A p+-type diffusion layer 35 and an n+-type diffusion layer 36 are formed on the surface of the p-type well region 33. The n+-type diffusion layer 34 formed on the surface of the n-type well region 32 and the p+-type diffusion layer 35 formed on the surface of the p-type well region 33 are electrically connected by a wiring 37 comprising aluminum or the like. An anode electrode 38 is connected to the wiring 37. A cathode electrode 39 is connected to the n+-type diffusion layer 36. COPYRIGHT: (C)2006,JPO&NCIPI