发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.
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申请公布号 |
US2006078024(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050072413 |
申请日期 |
2005.03.07 |
申请人 |
MATSUMURA HIROAKI;KOTANI YASUHISA |
发明人 |
MATSUMURA HIROAKI;KOTANI YASUHISA |
分类号 |
H01S5/00;H01S5/02;H01S5/024;H01S5/16;H01S5/20;H01S5/22;H01S5/32;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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